Effect of a-HgI2 epitaxial growth on the defect structure of CdTe:Ge substrates
نویسندگان
چکیده
The a-HgI2 /CdTe:Ge heterostructures have been studied by cathodoluminescence ~CL! in the scanning electron microscope. The a-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mm from the a-HgI2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and VTe generation at the interface take place during a-HgI2 epitaxial growth. © 1997 American Institute of Physics. @S0003-6951~97!02807-6#
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